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| 30 10V 25 5V 20 4.5V 16 4V 12 8 4 Vgs=3V 0 25C 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Vds=5V 20 Id (A) 15 3.5V 10 5 0 0 1 2 3 4 Vds (Volts) Fig 1: On-Region Characteristics Id (A) 125C Vgs (Volts) Figure 2: Transfer Characteristics 40 1.6 Normalized On-Resistance 35 Vgs=4.5V 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 Vgs=10V Id=7.2A Rds(on) (m:) 30 25 20 15 10 0 5 10 15 20 Id (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=10V Vgs=4.5V Id=6A 0 25 50 75 100 125 150 175 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 70 1.0E+01 Id=7.2A 60 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body diode characteristics 125C 25C Rds(on) (m:) 125C 40 30 20 25C Is Amps 50 10 8 Vds=15V Id=7.2A 1000 900 800 f=1MHz Vgs=0V Ciss Capacitance (pF) 700 600 500 400 300 200 100 Crss 0 5 Vgs (Volts) 6 4 2 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge characteristics Coss 0 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100 Rds(on) limited Tj(max)=150C Ta=25C 1ms 10ms 0.1s 100Ps 10Ps 40 Tj(max)=150C Ta=25C 30 Id (Amps) 10 Power W 1s 10s DC 20 1 10 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton Single Pulse T 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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